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Photoluminescence studies of individual and few GaSb/GaAs quantum rings

  • Department of Physics, Lancaster University, LA1 4YB, United Kingdom
  • Department of Applied Physics, Eindhoven University of Technology, The Netherlands

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Abstract

We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 µeV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift
Original languageEnglish
Article number117127
Number of pages6
JournalAIP Advances
Volume4
Issue number11
DOIs
Publication statusPublished - 1/11/2014

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