Photoluminescence studies of individual and few GaSb/GaAs quantum rings

M. P. Young; C. S. Woodhead; Jonny Roberts; Y. J. Noori; M. T. Noble; A. Krier; E. P. Smakman; P. M. Koenraad; M. Hayne; R. J. Young

doi:10.1063/1.4902177

Photoluminescence studies of individual and few GaSb/GaAs quantum rings

M. P. Young, C. S. Woodhead, Jonny Roberts, Y. J. Noori, M. T. Noble, A. Krier, E. P. Smakman, P. M. Koenraad, M. Hayne, R. J. Young

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Abstract

We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 µeV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift

Original language	English
Article number	117127
Number of pages	6
Journal	AIP Advances
Volume	4
Issue number	11
DOIs	https://doi.org/10.1063/1.4902177
Publication status	Published - 1/11/2014

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10.1063/1.4902177

1.4902177
© © 2014 Author(s).. All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
Final published version, 1.02 MBLicence: CC BY

http://scitation.aip.org/content/aip/journal/adva/4/11/10.1063/1.4902177

Enhancing the Light output of Solid State Emitters
Woodhead, C. S., 2017, Lancaster University. 107 p.
Research output: Thesis › Doctoral Thesis

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title = "Photoluminescence studies of individual and few GaSb/GaAs quantum rings",

abstract = "We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 µeV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift",

author = "Young, {M. P.} and Woodhead, {C. S.} and Jonny Roberts and Noori, {Y. J.} and Noble, {M. T.} and A. Krier and Smakman, {E. P.} and Koenraad, {P. M.} and M. Hayne and Young, {R. J.}",

note = "{\textcopyright} {\textcopyright} 2014 Author(s).. All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.",

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doi = "10.1063/1.4902177",

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TY - JOUR

T1 - Photoluminescence studies of individual and few GaSb/GaAs quantum rings

AU - Young, M. P.

AU - Woodhead, C. S.

AU - Roberts, Jonny

AU - Noori, Y. J.

AU - Noble, M. T.

AU - Krier, A.

AU - Smakman, E. P.

AU - Koenraad, P. M.

AU - Hayne, M.

AU - Young, R. J.

PY - 2014/11/1

Y1 - 2014/11/1

N2 - We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 µeV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift

AB - We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 µeV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift

U2 - 10.1063/1.4902177

DO - 10.1063/1.4902177

M3 - Journal article

VL - 4

JO - AIP Advances

JF - AIP Advances

IS - 11

M1 - 117127

ER -

Photoluminescence studies of individual and few GaSb/GaAs quantum rings

Abstract

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Research output

Enhancing the Light output of Solid State Emitters

Cite this