InAsSb-based nBn photodetectors: lattice mismatched growth on GaAs and low-frequency noise performance

Adam Craig; Michael Thompson; Z.-B. Tian; S. Krishna; Anthony Krier; Andrew Marshall

doi:10.1088/0268-1242/30/10/105011

InAsSb-based nBn photodetectors: lattice mismatched growth on GaAs and low-frequency noise performance

Adam Craig, Michael Thompson, Z.-B. Tian, S. Krishna, Anthony Krier, Andrew Marshall

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Abstract

An InAsSb nBn detector structure was grown on both GaAs and native GaSb substrates. Temperature dependent dark current, spectral response, specific detectivity (D*) and noise spectral density measurements were then carried out. Shot-noise-limited D*figures of 1.2 10 Jones × 10 and 3.0 10 Jones × 10 were calculated (based upon the sum of dark current and background photocurrent) for the sample grown on GaAs and the sample grown on GaSb, respectively, at 200 K. Noise spectral density measurements revealed knee frequencies of between 124–337 Hz and ∼8 Hz, respectively. Significantly, these devices could support focal
plane arrays capable of operating under thermoelectric cooling.

Original language	English
Article number	105011
Number of pages	7
Journal	Semiconductor Science and Technology
Volume	30
Issue number	10
DOIs	https://doi.org/10.1088/0268-1242/30/10/105011
Publication status	Published - 24/08/2015

User-defined Keywords

nBn
dark currents
1/f noise
IMF
specific detectivity

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10.1088/0268-1242/30/10/105011

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http://iopscience.iop.org/article/10.1088/0268-1242/30/10/105011

Establishing a new research capability in novel room temperature nBn infrared photodetectors for next generation infrared imaging applications
Marshall, A. (Principal Investigator)
1/02/11 → 31/07/12
Project: Research
Exploiting emerging interface misfit epitaxy to engineer cheaper, higher performance photodiodes for imaging, communications and gas monitoring
Marshall, A. (Principal Investigator)
Royal Academy of Engineering
18/10/10 → 17/10/15
Project: Research

Cite this

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title = "InAsSb-based nBn photodetectors: lattice mismatched growth on GaAs and low-frequency noise performance",

abstract = "An InAsSb nBn detector structure was grown on both GaAs and native GaSb substrates. Temperature dependent dark current, spectral response, specific detectivity (D*) and noise spectral density measurements were then carried out. Shot-noise-limited D*figures of 1.2 10 Jones × 10 and 3.0 10 Jones × 10 were calculated (based upon the sum of dark current and background photocurrent) for the sample grown on GaAs and the sample grown on GaSb, respectively, at 200 K. Noise spectral density measurements revealed knee frequencies of between 124–337 Hz and ∼8 Hz, respectively. Significantly, these devices could support focalplane arrays capable of operating under thermoelectric cooling.",

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author = "Adam Craig and Michael Thompson and Z.-B. Tian and S. Krishna and Anthony Krier and Andrew Marshall",

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AU - Krishna, S.

AU - Krier, Anthony

AU - Marshall, Andrew

N1 - Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. This is an author-created, un-copyedited version of an article accepted for publication/published in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi: 10.1088/0268-1242/30/10/105011

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N2 - An InAsSb nBn detector structure was grown on both GaAs and native GaSb substrates. Temperature dependent dark current, spectral response, specific detectivity (D*) and noise spectral density measurements were then carried out. Shot-noise-limited D*figures of 1.2 10 Jones × 10 and 3.0 10 Jones × 10 were calculated (based upon the sum of dark current and background photocurrent) for the sample grown on GaAs and the sample grown on GaSb, respectively, at 200 K. Noise spectral density measurements revealed knee frequencies of between 124–337 Hz and ∼8 Hz, respectively. Significantly, these devices could support focalplane arrays capable of operating under thermoelectric cooling.

AB - An InAsSb nBn detector structure was grown on both GaAs and native GaSb substrates. Temperature dependent dark current, spectral response, specific detectivity (D*) and noise spectral density measurements were then carried out. Shot-noise-limited D*figures of 1.2 10 Jones × 10 and 3.0 10 Jones × 10 were calculated (based upon the sum of dark current and background photocurrent) for the sample grown on GaAs and the sample grown on GaSb, respectively, at 200 K. Noise spectral density measurements revealed knee frequencies of between 124–337 Hz and ∼8 Hz, respectively. Significantly, these devices could support focalplane arrays capable of operating under thermoelectric cooling.

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KW - 1/f noise

KW - IMF

KW - specific detectivity

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InAsSb-based nBn photodetectors: lattice mismatched growth on GaAs and low-frequency noise performance

Abstract

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Projects

Establishing a new research capability in novel room temperature nBn infrared photodetectors for next generation infrared imaging applications

Exploiting emerging interface misfit epitaxy to engineer cheaper, higher performance photodiodes for imaging, communications and gas monitoring

Cite this