Ultra-low energy, non-volatile, random access memory

Hayne, Manus (Principal Investigator)

Physics

Project: Research

Status	Finished
Effective start/end date	4/04/18 → 30/04/19

Funding

The Joy Welch Charitable Trust: £5,000.00

3 Journal article
1 Conference contribution/Paper

ULTRARAM: A Low-Energy, High-Endurance, Compound-Semiconductor Memory on Silicon
Hodgson, P., Lane, D., Carrington, P., Delli, E., Beanland, R. & Hayne, M., 30/04/2022, In: Advanced Electronic Materials. 8, 4, 9 p., 2101103.
Research output: Contribution to Journal/Magazine › Journal article › peer-review

Open Access
File

235 Downloads (Pure)
Demonstration of a Fast, Low-Voltage, III-V Semiconductor, Non-Volatile Memory
Lane, D., Hodgson, P., Potter, R. & Hayne, M., 12/05/2021, 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, p. 1-3 3 p.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Open Access
File

73 Downloads (Pure)
ULTRARAM: toward the development of a III-V semiconductor, non-volatile, random-access memory
Lane, D., Hodgson, P., Potter, R., Beanland, R. & Hayne, M., 31/05/2021, In: IEEE Transactions on Electron Devices. 68, 5, p. 2271-2274 4 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review

Open Access
File

2 Citations (Scopus)

167 Downloads (Pure)