MSI: Continuation Study of Compound Semiconductor Non-volatile RAM Manufacture on Si Substrates

Hayne, Manus (Principal Investigator)

Physics

Project: Research

Status	Finished
Effective start/end date	1/10/19 → 30/06/22

Funding

Engineering and Physical Sciences Research Council: £91,120.47

3 Journal article
1 Conference contribution/Paper

ULTRARAM: A Low-Energy, High-Endurance, Compound-Semiconductor Memory on Silicon
Hodgson, P., Lane, D., Carrington, P., Delli, E., Beanland, R. & Hayne, M., 30/04/2022, In: Advanced Electronic Materials. 8, 4, 9 p., 2101103.
Research output: Contribution to Journal/Magazine › Journal article › peer-review

Open Access
File

236 Downloads (Pure)
Demonstration of a Fast, Low-Voltage, III-V Semiconductor, Non-Volatile Memory
Lane, D., Hodgson, P., Potter, R. & Hayne, M., 12/05/2021, 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, p. 1-3 3 p.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Open Access
File

73 Downloads (Pure)
Simulations of resonant tunnelling through InAs/AlSb heterostructures for ULTRARAM™ memory
Lane, D. & Hayne, M., 22/06/2021, In: Journal of Physics D: Applied Physics. 54, 35, 7 p., 335104.
Research output: Contribution to Journal/Magazine › Journal article › peer-review

Open Access

1 Citation (Scopus)